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AEGIS
SEMICONDUTORES LTDA.
A1A:200.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 180OC A1A:200.02 A1A:200.04 A1A:200.06 A1A:200.08 A1A:200.10 A1A:200.12 A1A:200.14 A1A:200.16 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage
O TJ = 25 to 180 C
This datasheet applies to: Metric thread: A1A:200.XX, A1B:200.XX Inch thread: A2A:200.XX, A2B:200.XX
TJ = -40 to 0O C 200 400 600 800 1000 1200 1400 1600
300 500 700 900 1100 1300 1500 1700
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 200 125 314 3950 IFSM Max. Peak non-rep. surge current 4140 A 4700 4920 78 I2t Max. I2t capability 71 110 101 It
2 1/2
O
UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial T J = 180OC, rated VRRM applied after surge. Initial T J = 180OC, no voltage applied after surge. Initial T J = 180OC, rated VRRM applied after surge. Initial T J = 180 C, no voltage applied after surge.
O O
C C A C A
IF(RMS) Nom. RMS current
kA2s
t = 8.3 ms t = 10ms
Max. I t
2 1/2
capability
t = 8.3 ms Initial T J = 180O C, no voltage applied after surge. kA2s1/2 N.m(Lbf.in) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
F Mounting Force
1100 14(125)
AEGIS
SEMICONDUTORES LTDA.
A1A:200.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------------TYP. --------------------MAX. UNITS 1.4 0.9 1 0.79 0.64 12 0.275 0.3 0.335 0.1 V V mW mA
O O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 630A. TJ = 180 OC Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM
O
C/W DC operation C/W 180O sine wave C/W 120O rectangular wave C/W Mtg. Surface smooth, flat and greased. Single side. -----
O O
O
----120(4.2) DO-205AC(DO-30)
g(oz.)
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C)
180
Maximum Allowable Case Temperature (C)
180
170
170
160
30
160
30
150
60
150
60
140
90 120
140
90
130
180
130
120 DC
120
*Sinusoidal waveform
120 0
*Rectangular waveform
180
0
50
100
150
200
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:200.XX
Maximum Average Forward Power Loss
600
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
30
500
30
500
60 90 120 180
400
400
60 90 120 180 DC
300
300
200
200
100
100
0 0 50 100 150 200 250 300 350
*Sinusoidal waveform
0 0 50 100 150 200 250 300 350
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Forward Voltage Drop
1000
Fig. 4 - Forward Power Loss Characteristics
Transient Thermal Impedance ZthJC
1
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
100
0.1
125C
25C
10 0.5 1.0 1.5 2.0 2.5
0.01 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:200.XX
DO-205AC (DO-30)
SW 27
M12 x 1.5 1/2" UNF 2A

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